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China JOPTEC LASER CO., LTD certification
China JOPTEC LASER CO., LTD certification
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GaN Substrates

GaN Substrates
GaN Substrates

Large Image :  GaN Substrates

Product Details:
Place of Origin: HEFEI, CHINA
Brand Name: JOPTEC
Payment & Shipping Terms:
Minimum Order Quantity: 10 PCS
Packaging Details: Boxes
Delivery Time: 30 Days
Payment Terms: T/T
Supply Ability: 5000000 PCS/Month

GaN Substrates

Material: GaN Type: GaN-FS-10, GaN-FS-15
Orientation: C-axis(0001) ± 0.5° TTV: ≤15 µm
BOW: ≤20 µm Carrier Concentration: >5x1017/cm3
Typical Thickness (mm): N-type, Semi-Insulating Resistivity(@300K): < 0.5 Ω•cm, >106 Ω•cm
Usable Surface Area: > 90%

With wide direct bandgap(3.4 eV), strong atomic bonds, high thermal conductivity and excellent radiation resistance, GaN is not only short-wave-length optoelectronic material, but also a well alternative material for high temperature semiconductor devices. Based on the stable physical and chemical properties, GaN is suitable for LED applications (blue, green, UV-light), ultraviolet detectors and optoelectronic high-power and high-frequency devices.


Type GaN-FS-10 GaN-FS-15
Size 10.0mm×10.5mm 14.0mm×15.0mm

Rank 300, Rank 350,

Rank 400

300 ± 25 µm, 350 ± 25 µm,

400 ± 25 µm

Orientation C-axis(0001) ± 0.5°
TTV ≤15 µm
BOW ≤20 µm
Carrier Concentration >5x1017/cm3 /
Conduction Type N-type Semi-Insulating
Resistivity(@300K) < 0.5 Ω•cm >106 Ω•cm
Dislocation Density Less than 5x106 cm-2
Useable Surface Area > 90%

Front Surface: Ra < 0.2nm. Epi-ready polished

Back Surface: Fine ground

Package Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.

Contact Details

Contact Person: JACK HAN

Tel: 86-18655618388

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